مرکز منطقه ای اطلاع رساني علوم و فناوري - Linear Drain Current Degradation of ps-LDMOS Transistor Under <formula formulatype="inline"> <img src="/images/tex/21065.gif" alt="{\\rm I}_{\\rm sub\\max }"> </formula> and <formula formulatype="inline"> <img src="/images/tex/21066.gif" alt="{\\rm I}

Title :

Linear Drain Current Degradation of ps-LDMOS Transistor Under ${\\rm I}_{\\rm sub\\max }$ and ${\\rm I}_{\\</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Author : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Weifeng Sun ; Siyang Liu ; Tingting Huang ; Chunwei Zhang</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Author_Institution : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Nat. ASIC Syst. Eng. Res. Center, Southeast Univ., Nanjing, China</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Volume : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>34</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Issue : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>8</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>fYear : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>2013</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>fDate : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Aug. 2013</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Firstpage : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>1032</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Lastpage : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>1034</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Abstract : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>The linear drain current (I<sub>dlin</sub>) degradations of the p-type symmetric lateral double diffused MOS (ps-LDMOS) transistor under the maximum substrate current (I<sub>submax</sub>) and the maximum gate current (I<sub>gmax</sub>) stresses are experimentally investigated for the first time. For the stress time , the I<sub>dlin</sub> increase under the I<sub>gmax</sub> stress is faster than that under I<sub>submax</sub> stress because of more serious hot-electron injection happening at the bird´s beak of source region, and the degradation mechanism and damage position are very different from that of the unsymmetric LDMOS. However, for the stress time longer than 1000 s, the I<sub>dlin</sub> begins to decrease under the I<sub>gmax</sub> stress resulting from the interface state dominating the degradation of channel region, whereas the I<sub>dlin</sub> still keeps increasing under the I<sub>submax</sub> stress because of the continuous hot-electron injection into the field oxide of drain drift region.</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Keywords : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>MOSFET; hot carriers; interface states; double diffused MOS transistor; drain drift region; hot-electron injection; interface state; linear drain current degradation; p-type symmetric lateral MOS transistor; ps-LDMOS transistor; substrate current; <formula formulatype=$ $p$-type symmetric lateral double diffused MOS ps-LDMOS; ${rm I}_{rm{gmax}}$; Hot-carrier degradation; maximum gate current; maximum substrate current ${rm I}_{rm{submax}}$;