Title :
Hot-carrier effects in n-channel MOS transistors under alternating stress conditions
Author :
Bellens, R. ; Heremans, P. ; Groeseneken, G. ; Maes, Herman E.
Author_Institution :
IMEC, Heverlee, Belgium
fDate :
5/1/1988 12:00:00 AM
Abstract :
Charge pumping measurements show the so-called ´enhanced´ degradation under alternating stress conditions, as concluded before on the basis of threshold-voltage (or transconductance) shifts only, can be totally explained by the masking of interface traps by channel shortening and compensation of trapped charge during the degradation.<>
Keywords :
hot carriers; insulated gate field effect transistors; interface electron states; semiconductor device testing; alternating stress conditions; channel shortening; charge pumping; hot carrier effects; interface trap masking; n-channel MOS transistors; threshold voltage shift; transconductance shift; trapped charge compensation; Charge measurement; Charge pumps; Current measurement; Degradation; Electron traps; Hot carrier effects; Hot carriers; MOSFETs; Stress; Transconductance;
Journal_Title :
Electron Device Letters, IEEE
