DocumentCode
1401228
Title
Hot-carrier effects in n-channel MOS transistors under alternating stress conditions
Author
Bellens, R. ; Heremans, P. ; Groeseneken, G. ; Maes, Herman E.
Author_Institution
IMEC, Heverlee, Belgium
Volume
9
Issue
5
fYear
1988
fDate
5/1/1988 12:00:00 AM
Firstpage
232
Lastpage
234
Abstract
Charge pumping measurements show the so-called ´enhanced´ degradation under alternating stress conditions, as concluded before on the basis of threshold-voltage (or transconductance) shifts only, can be totally explained by the masking of interface traps by channel shortening and compensation of trapped charge during the degradation.<>
Keywords
hot carriers; insulated gate field effect transistors; interface electron states; semiconductor device testing; alternating stress conditions; channel shortening; charge pumping; hot carrier effects; interface trap masking; n-channel MOS transistors; threshold voltage shift; transconductance shift; trapped charge compensation; Charge measurement; Charge pumps; Current measurement; Degradation; Electron traps; Hot carrier effects; Hot carriers; MOSFETs; Stress; Transconductance;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.700
Filename
700
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