Title :
Transient Simulation of Microwave SiC MESFETs With Improved Trap Models
Author :
Hjelmgren, Hans ; Allerstam, Fredrik ; Andersson, Kristoffer ; Nilsson, Per-Åke ; Rorsman, Niklas
Author_Institution :
Microwave Electron. Lab., Chalmers Univ. of Technol., Goteborg, Sweden
fDate :
3/1/2010 12:00:00 AM
Abstract :
Measured and simulated transient characteristics of a SiC metal-semiconductor field-effect transistor are compared. Self-heating, gate tunneling, substrate, and surface traps are taken into account in the simulations. By explicitly filling surface traps at the vicinity of the gate during pinchoff, close correspondence between simulated and measured gate lags is achieved.
Keywords :
Schottky gate field effect transistors; circuit simulation; electron traps; microwave field effect transistors; silicon compounds; transient analysis; tunnelling; gate lag; gate tunneling; metal-semiconductor field-effect transistor; microwave SiC MESFET; self-heating; substrate; surface trap; transient simulation; trap model; Computational modeling; Design automation; Electron traps; MESFETs; Microwave devices; Microwave technology; Semiconductor process modeling; Silicon carbide; Substrates; Thermal conductivity; Charge carrier processes; MESFET power amplifiers; microwave transistor; silicon carbide; technology computer-aided design (TCAD);
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2009.2039679
