Title :
Scaling properties of In0.7Ga0.3As buried-channel MOSFETs with atomic layer deposited gate dielectric
Author :
Xue, Feng ; Jiang, Aimin ; Zhao, Hang ; Chen, Yuanfeng ; Wang, Yannan ; Zhou, Fen ; Lee, Jeyull
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Texas at Austin, Austin, TX, USA
Abstract :
Deep-submicron In0.7Ga0.3As buried-channel MOSFETs with various gate lengths down to 40 nm are demonstrated. In0.7Ga0.3As buried-channel MOSFETs were fabricated on an epitaxial wafer using an InP/In0.52Al0.48As double barrier. The device characteristics were analysed, including subthreshold swing, transconductance and drive current. Good scaling behaviour was observed for these III-V MOSFETs. For a 40-nm gate length device, the VT roll-off is around 100 mV, the subthreshold swing is 132 mV/dec and DIBL is 214 mV/V.
Keywords :
III-V semiconductors; MOSFET; atomic layer epitaxial growth; buried layers; gallium arsenide; indium compounds; nanotechnology; ALD gate dielectric; In0.7Ga0.3As; InP-In0.52Al0.48As; buried-channel MOSFET; double barrier; drive current; epitaxial wafer; scaling property; subthreshold swing; transconductance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2010.2960
