Designing 1-V op amps using standard digital CMOS technology

Author

Blalock, Benjamin J. ; Allen, Philip E. ; Rincon-Mora, Gabriel A.

Author_Institution

Dept. of Electr. & Comput. Eng., Mississippi State Univ., MS, USA

Volume

45

Issue

7

fYear

1998

fDate

7/1/1998 12:00:00 AM

Firstpage

769

Lastpage

780

Abstract

This paper addresses the difficulty of designing 1-V capable analog circuits in standard digital complementary metal-oxide-semiconductor (CMOS) technology, Design techniques for facilitating 1-V operation are discussed and 1-V analog building block circuits are presented. Most of these circuits use the bulk-driving technique to circumvent the metal-oxide-semiconductor field-effect transistor turn-on (threshold) voltage requirement. Finally, techniques are combined within a 1-V CMOS operational amplifier with rail-to-rail input and output ranges. While consuming 300 μW, the 1-V rail-to-rail CMOS op amp achieves 1.3-MHz unity-gain frequency and 57° phase margin for a 22-pF load capacitance

Keywords

CMOS analogue integrated circuits; capacitance; differential amplifiers; operational amplifiers; 1 V; 1.3 MHz; 22 pF; 300 muW; MOSFET turn-on voltage; analog circuits; bulk-driving technique; digital CMOS technology; load capacitance; op amps; phase margin; rail-to-rail input; rail-to-rail output; threshold voltage; unity-gain frequency; Analog circuits; CMOS analog integrated circuits; CMOS digital integrated circuits; CMOS technology; FETs; Frequency; Operational amplifiers; Rail to rail amplifiers; Rail to rail inputs; Threshold voltage;

fLanguage

English

Journal_Title

Circuits and Systems II: Analog and Digital Signal Processing, IEEE Transactions on

Publisher

ieee

ISSN

1057-7130

Type

jour

DOI

10.1109/82.700924

Filename

700924