Title :
Analysis of the large-signal characteristics of power heterojunction bipolar transistors exhibiting self-heating effects
Author :
Samelis, Apostolos ; Pavlidis, Dimitris
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
fDate :
4/1/1997 12:00:00 AM
Abstract :
The large-signal microwave characteristics of AlGaAs/GaAs heterojunction bipolar transistors (HBTs) are modeled using the conventional Gummel-Poon-based bipolar junction transistor (BJT) model and extending it to include self-heating effects. The model is incorporated as a user-defined model in a commercial circuit simulator. The experimental microwave characteristics of HBTs are analyzed using the new model and harmonic balance techniques and the impact of self-heating effects on the device large-signal characteristics is investigated. Use of constant base voltage rather than constant current is more suitable for achieving maximum output power. Self-heating induced by RF drive is reduced under constant base current conditions. Increased thermal capacitance values result in gain enhancement at high power levels
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; microwave bipolar transistors; microwave power transistors; power bipolar transistors; semiconductor device models; AlGaAs-GaAs; Gummel-Poon model; RF drive; circuit simulator; gain; harmonic balance; large-signal microwave characteristics; power heterojunction bipolar transistor; self-heating; thermal capacitance; Circuit simulation; Gallium arsenide; Harmonic analysis; Heterojunction bipolar transistors; Microwave devices; Microwave theory and techniques; Microwave transistors; Power generation; Radio frequency; Voltage;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
