Title :
A Millimeter-Wave (23–32 GHz) Wideband BiCMOS Low-Noise Amplifier
Author :
El-Nozahi, Mohamed ; Sánchez-Sinencio, Edgar ; Entesari, Kamran
Author_Institution :
Dept. of Electr. & Comput. Eng., Texas A&M Univ., College Station, TX, USA
Abstract :
This paper presents a 23-32 GHz wideband BiCMOS low-noise amplifier (LNA). The LNA utilizes coupled-resonators to provide a wideband load. To our knowledge, the proposed LNA achieves the widest bandwidth with minimum power consumption using 0.18 ¿m BiCMOS technology in K-band. Analytical expressions for the wideband input matching, gain, noise figure and linearity are presented. The LNA is implemented using 0.18 ¿m BiCMOS technology and occupies an area of 0.25 mm2 . It achieves a voltage gain of 12 dB, 3-dB bandwidth of 9 GHz, noise figure between 4.5-6.3 dB, linearity higher than -6.4 dBm with a power consumption of 13 mW from a 1.5 V supply.
Keywords :
BiCMOS analogue integrated circuits; MMIC amplifiers; low noise amplifiers; millimetre wave amplifiers; resonators; K-band; LNA; coupled-resonators; frequency 23 GHz to 32 GHz; gain 12 dB; millimeterwave wideband BiCMOS low-noise amplifier; noise figure; power 13 mW; size 0.18 mum; voltage 1.5 V; wideband input matching; Bandwidth; BiCMOS integrated circuits; Energy consumption; Impedance matching; K-band; Linearity; Low-noise amplifiers; Millimeter wave technology; Noise figure; Wideband; BiCMOS; coupled-resonators; low-noise amplifier; millimeter-wave; wideband;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2009.2038126
