DocumentCode
1403007
Title
Study of gate oxide leakage and charge trapping in ZMR and SIMOX SOI MOSFETs
Author
Lee, Chun-Teh ; Burns, James A.
Author_Institution
Lincoln Lab., MIT, Lexington, MA, USA
Volume
9
Issue
5
fYear
1988
fDate
5/1/1988 12:00:00 AM
Firstpage
235
Lastpage
237
Abstract
Characterization of gate oxides grown on zone-melting-recrystallized (ZMR) and silicon-implanted-with-oxygen (SIMOX) films indicates oxide leakage and charge trapping to be several orders of magnitude greater than their bulk silicon counterparts. Electron trapping is the primary trapping mechanism for constant current injection in the gate oxides of these SOI (silicon-on-insulator) films. Similar type of traps are observed in ZMR and SIMOX oxides.<>
Keywords
electron traps; insulated gate field effect transistors; oxidation; semiconductor-insulator boundaries; I-V characteristics; SIMOX films; SOI MOSFETs; Si-SiO/sub 2/; charge trapping; constant current injection; electron trapping; gate oxide leakage; zone melting recrystallised films; Amorphous materials; Conductive films; Electron traps; Immune system; MOSFETs; Semiconductor films; Silicon; Testing; Voltage;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.701
Filename
701
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