An analytic theory of the Auger transistor: a hot electron bipolar transistor

Author

Tiwari, Sandip ; Wang, Wen I. ; East, Jack R.

Volume

37

Issue

4

fYear

1990

fDate

4/1/1990 12:00:00 AM

Firstpage

1121

Lastpage

1131

Abstract

The operation of an Auger transistor is investigated, using a coupled analysis based on thermionic-emission and drift-diffusion theory. Characteristics for steady-state and small-signal operation are derived for single electron-hole pair generation by each injected hot electron. The effect of parasitics is included in this simple theory in order to project, for some of the plausible material systems, the figures of merit for high-frequency applications. The analysis suggests that Auger transistors employing very-small-bandgap semiconductors in the heavily doped base and operating at low temperatures exhibit good performance as devices are scaled in size and operating voltage

Keywords

Auger effect; electron-hole recombination; hot carriers; hot electron transistors; semiconductor device models; Auger transistor; HET; analytic theory; coupled analysis; drift-diffusion theory; figures of merit; heavily doped base; high-frequency applications; hot electron bipolar transistor; low temperatures; parasitics; single electron-hole pair generation; small-signal operation; steady state operation; thermionic-emission; very-small-bandgap semiconductors; Bipolar transistors; Charge carrier processes; Conducting materials; Electrons; Impact ionization; Photonic band gap; Radiative recombination; Spontaneous emission; Steady-state; Zinc compounds;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.52451

Filename

52451