DocumentCode
1403228
Title
Device dependence of charging effects from high-current ion implantation
Author
Felch, S.B. ; Basra, Vijay K. ; Mckenna, Charles M.
Author_Institution
Varian Res. Center, Palo Alto, CA, USA
Volume
35
Issue
12
fYear
1988
fDate
12/1/1988 12:00:00 AM
Firstpage
2338
Lastpage
2342
Abstract
Surface charge buildup on insulated layers during ion implantation can lead to a degradation in the performance of MOS devices with thin gate oxides. In order to study this problem, a set of device structures with 130-Å-thick gate oxides has been designed. The breakdown characteristics of these structures after implantation are reported and analyzed to determine the dependency of implant charging damage on the specific device structure
Keywords
failure analysis; insulated gate field effect transistors; ion implantation; semiconductor technology; 130 A; MOS devices; breakdown characteristics; charge accumulation; charging effects; dependency of implant charging damage; device dependence; device structures; high-current ion implantation; insulated layers; specific device structure; surface charge buildup; test structures; thin gate oxides; Degradation; Electron beams; Fingers; Implants; Insulation; Ion implantation; MOS devices; Silicon; Surface charging; Testing;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.8811
Filename
8811
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