Title :
Device dependence of charging effects from high-current ion implantation
Author :
Felch, S.B. ; Basra, Vijay K. ; Mckenna, Charles M.
Author_Institution :
Varian Res. Center, Palo Alto, CA, USA
fDate :
12/1/1988 12:00:00 AM
Abstract :
Surface charge buildup on insulated layers during ion implantation can lead to a degradation in the performance of MOS devices with thin gate oxides. In order to study this problem, a set of device structures with 130-Å-thick gate oxides has been designed. The breakdown characteristics of these structures after implantation are reported and analyzed to determine the dependency of implant charging damage on the specific device structure
Keywords :
failure analysis; insulated gate field effect transistors; ion implantation; semiconductor technology; 130 A; MOS devices; breakdown characteristics; charge accumulation; charging effects; dependency of implant charging damage; device dependence; device structures; high-current ion implantation; insulated layers; specific device structure; surface charge buildup; test structures; thin gate oxides; Degradation; Electron beams; Fingers; Implants; Insulation; Ion implantation; MOS devices; Silicon; Surface charging; Testing;
Journal_Title :
Electron Devices, IEEE Transactions on
