Fabrication of high-speed GaAs photoconductive pulse generators and sampling gates by ion implantation

Author

Paulter, Nicholas G. ; Gibbs, Alan J. ; Sinha, Dipen N.

Author_Institution

Los Alamos Nat. Lab., NM, USA

Volume

35

Issue

12

fYear

1988

fDate

12/1/1988 12:00:00 AM

Firstpage

2343

Lastpage

2348

Abstract

An ion-implantation technique used to create high-speed photoconductive devices in semi-insulating gallium arsenide (GaAs) is described. The effects of electrical contacts, GaAs substrate material, and various implant parameters on device performance are presented. The best measured performance characteristics of sampled (correlation) waveforms are: full-width-at-half-maximum of 4.5 ps, rise time (10 to 90% of full amplitude) of 3.2 ps, and signal-to-noise ratio of approximately 50 dB (integration time is 10 ms)

Keywords

III-V semiconductors; gallium arsenide; high-speed optical techniques; ion implantation; photoconducting devices; pulse generators; semiconductor switches; 10 ms; 3.2 to 4.5 ps; 50 dB; FWHM; GaAs substrate material; SNR; device performance; electrical contacts; fabrication; full-width-at-half-maximum; high-speed GaAs photoconductive pulse generators; high-speed photoconductive devices; implant parameters; integration time; ion implantation; performance characteristics; photoconducting switches; rise time; sampled waveforms; sampling gates; semiinsulating GaAs; signal-to-noise ratio; Contacts; Fabrication; Gallium arsenide; Implants; Photoconducting devices; Photoconducting materials; Photoconductivity; Pulse generation; Signal to noise ratio; Time measurement;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.8812

Filename

8812