Long-term operation of planar InGaAs/InP p-i-n photodiodes

Author

Bauer, Josef G. ; Trommer, Reiner

Author_Institution

Siemens AG, Munich, West Germany

Volume

35

Issue

12

fYear

1988

fDate

12/1/1988 12:00:00 AM

Firstpage

2349

Lastpage

2354

Abstract

The long-term stability of planar InGaAs p-i-n photodiodes with InP cap layer and SiN_x passivation at elevated temperatures up to 200°C is discussed. An increase of the dark current with saturation at the level of a few nanoamperes has been observed as the only chip-related degradation mode. In additional experiments this increase has been identified as surface leakage current flowing due to charge transfer in the SiN_x and to changes in the InP-SiN_x interface state density. For a dark current increase to 1 nA under 15-V reverse-bias voltage at room temperature, a median lifetime of 10⁹ h has been extrapolated

Keywords

III-V semiconductors; gallium arsenide; indium compounds; life testing; p-i-n diodes; photodiodes; reliability; 1 nA; 15 V; 1E9 h; 80 to 200 C; InGaAs-InP; InP cap layer; InP-SiN_x interface state density; SiN_x passivation; accelerated testing; chip-related degradation mode; dark current; elevated temperatures; long term operation; long-term stability; median lifetime; p-i-n photodiodes; planar p-i-n photodiodes; reverse-bias voltage; room temperature; surface leakage current; Dark current; Degradation; Indium gallium arsenide; Indium phosphide; Leakage current; PIN photodiodes; Passivation; Silicon compounds; Stability; Temperature;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.8813

Filename

8813