Derivation of the Small Signal Response and Equivalent Circuit Model for a Separate Absorption and Multiplication Layer Avalanche Photodetector

Author

Dai, Daoxin ; Rodwell, Mark J.W. ; Bowers, John E. ; Kang, Yimin ; Morse, Mike

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of California at Santa Barbara, Santa Barbara, CA, USA

Volume

16

Issue

5

fYear

2010

Firstpage

1328

Lastpage

1336

Abstract

A small signal analysis for a separate-absorption-charge-multiplication (SACM) avalanche photodetector (APD) is presented for the general case when the electrons and the holes have different ionization coefficients and different velocities. The analytic expressions for the impedance and frequency response are given and a simplified equivalent circuit (including an inductance with a series resistance in parallel with a capacitance) for the APD is obtained. The calculation and experimental results show that the impedance of the APD operated at high bias voltages has a maximal value at a certain frequency due to the resonance of the LC-circuit, and this is the origin for a peak-enhancement of the frequency response.

Keywords

avalanche photodiodes; equivalent circuits; frequency response; photodetectors; LC-circuit; equivalent circuit model; frequency response; ionization coefficients; separate-absorption-charge-multiplication avalanche photodetector; small signal response; Absorption; Capacitance; Charge carrier processes; Equivalent circuits; Frequency response; Impedance; Inductance; Ionization; Photodetectors; Signal analysis; Avalanche photodetector (APD); Ge; Si;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/JSTQE.2009.2038497

Filename

5406098