Title :
Behavioural modelling and impact analysis of physical impairments in quadrature modulators
Author :
Li, Meng ; Hoover, L. ; Gard, Kevin G. ; Steer, Michael B.
Author_Institution :
FutureWei Technol. Inc., Plano, TX, USA
fDate :
12/1/2010 12:00:00 AM
Abstract :
Non-linear distortion and linear static errors (DC offset and gain/phase imbalance) are the major analogue impairments in microwave I/Q quadrature modulators. They can adversely impact the performance of the systems using them, especially for direct-conversion transceiver systems. The impacts of these impairments were investigated for three different modulator applications: double sideband modulation, zero intermediate frequency (IF) single sideband (SSB) orthogonal frequency-division multiplexing (OFDM) modulation and low-IF SSB OFDM modulation. A behavioural model for characterising the non-linear response and the linear static errors was developed. The non-linear characteristic of each input was modelled by a complex power series based on amplitude-to-amplitude modulation and amplitude-to-phase modulation measurements. The linear static errors were modelled as three static error terms added into the complex power series based on a four-DC-point vector network analyser measurement. The non-linear model was validated by measurements with three types of signals representing the three modulator applications.
Keywords :
OFDM modulation; amplitude modulation; nonlinear distortion; phase modulation; amplitude-to-amplitude modulation measurement; amplitude-to-phase modulation measurement; behavioural modelling; direct-conversion transceiver systems; double-sideband modulation; four-DC-point vector network analyser measurement; impact analysis; linear static errors; low-IF SSB OFDM modulation; microwave I-Q quadrature modulators; nonlinear distortion; physical impairments; zero-IF SSB orthogonal frequency-division multiplexing modulation; zero-intermediate frequency single-sideband OFDM modulation;
Journal_Title :
Microwaves, Antennas & Propagation, IET
DOI :
10.1049/iet-map.2009.0278