Title :
Measurement of MOSFET channel potential profile
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
fDate :
12/1/1988 12:00:00 AM
Abstract :
A method for the extraction of the channel potential of a MOSFET from the gate-to-drain capacitance is presented. The method is demonstrated on two devices. Comparison is made between experimental results and numerical simulation. It is shown that a potential drop within the drain diffusion would reduce the actual voltage drop across the channel. A technique to account for this voltage drop is also given
Keywords :
insulated gate field effect transistors; MOSFET channel potential profile; channel potential; drain diffusion; experimental results; gate-to-drain capacitance; measurement method; numerical simulation; potential drop; voltage drop; Area measurement; Capacitance measurement; Data mining; FETs; Frequency measurement; Length measurement; MOSFET circuits; Numerical simulation; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
