1/f noise in the linear region of LDD MOSFETs

Author

Tsai, Cliff Y H ; Gong, Jeng

Author_Institution

Dept. of Electr. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan

Volume

35

Issue

12

fYear

1988

fDate

12/1/1988 12:00:00 AM

Firstpage

2373

Lastpage

2377

Abstract

A lightly doped drain (LDD) MOSFET can be decomposed as an intrinsic MOSFET in series with n^- source and drain regions. Under the assumption that the 1/f noise mainly comes from the intrinsic MOSFET part of the device, an expression for the drain noise power spectrum was developed in terms of terminal voltages. Noise measurements were performed on n-channel devices with effective channel lengths varying from 0.87 to 11.37 μm. Good agreement between experimental values and theoretical values for a device channel length shorter than 4 μm was obtained. It was also found that the LDD device has less noise than a conventional-structured MOSFET with the same channel length and operated under same terminal voltages

Keywords

electric noise measurement; electron device noise; insulated gate field effect transistors; random noise; semiconductor device models; 0.87 to 11.37 micron; 1/f noise; LDD MOSFET; channel lengths; drain noise power spectrum; experimental values; expression; linear region; models; n-channel devices; terminal voltages; theoretical values; 1f noise; Circuit noise; Electrical resistance measurement; Electron traps; Fluctuations; Ion implantation; MOSFETs; Noise measurement; Performance evaluation; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.8817

Filename

8817