Author :
Bradley, Jonathan D B ; Stoffer, Remco ; Bakker, Arjen ; Agazzi, Laura ; Ay, Feridun ; Wörhoff, Kerstin ; Pollnau, Markus
Author_Institution :
Integrated Opt. Microsyst. group, Univ. of Twente, Enschede, Netherlands
fDate :
3/1/2010 12:00:00 AM
Abstract :
A combined planar lossless optical amplifier and 1 Ã 2 power splitter device has been realized in Al2O3:Er3+ on silicon. Net internal gain was measured over a wavelength range of 40 nm across the complete telecom C-band (1525-1565 nm). Calculations predict net gain in a combined amplifier and 1 Ã 4 power splitter device over the same wavelength range for a total injected pump power as low as 30 mW.
Keywords :
aluminium compounds; erbium; integrated optics; optical beam splitters; optical fibre amplifiers; silicon; Al2O3:Er3+; Si; integrated zero-loss optical amplifier; planar lossless optical amplifier; power splitter; telecom C-band; wavelength 1525 nm to 1565 nm; Erbium; Gain measurement; Optical amplifiers; Optical devices; Optical losses; Optical pumping; Power amplifiers; Semiconductor optical amplifiers; Silicon; Stimulated emission; Aluminum oxide; erbium; integrated optics; integrated waveguide device; optical amplifier;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2009.2037927