Title :
High performance CW 1.26 μm GaInNAsSb-SQW and 1.20 μm GaInAsSb-SQW ridge lasers
Author :
Shimizu, H. ; Kumada, K. ; Uchiyama, S. ; Kasukawa, A.
Author_Institution :
Furukawa Electr. Co. Ltd., Yokohama, Japan
fDate :
9/28/2000 12:00:00 AM
Abstract :
Long-wavelength GaInNAsSb SQW lasers and GaInAsSb SQW lasers that include small amounts of Sb have been successfully grown by gas-source molecular beam epitaxy (GSMBE) and processed into ridge lasers. The GaInNAsSb lasers oscillated under CW operation at 1.258 μm at room temperature. A low CW threshold current of 10.2 mA and high characteristic temperature (T0) of 146 K were obtained for the GaInNAsSb lasers which is the best result for GaInNAs-based narrow-stripe lasers. Furthermore. The GaInAsSb lasers oscillated under CW operation at 1.20 μm at room temperature. A low CW threshold current of 6.3 mA and high characteristic temperature (T0) of 756 K were obtained for the GaInAsSb lasers, which is also the best result for the 1.2 μm-range of highly strained GaInAs-based narrow-stripe lasers
Keywords :
III-V semiconductors; chemical beam epitaxial growth; gallium arsenide; gallium compounds; indium compounds; laser beams; optical fabrication; quantum well lasers; ridge waveguides; waveguide lasers; 1.20 mum; 1.258 mum; 1.26 mum; 10.2 mA; 146 K; 256 K; 298 K; 6.3 mA; CW operation; CW threshold current; GaInAsSb; GaInAsSb lasers; GaInAsSb-SQW ridge lasers; GaInNAs-based narrow-stripe lasers; GaInNAsSb; GaInNAsSb-SQW ridge lasers; characteristic temperature; gas-source molecular beam epitaxy; high performance CW laser; highly strained GaInAs-based narrow-stripe lasers; long-wavelength single quantum well lasers; ridge lasers; room temperature; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20001228
