Title :
Room temperature (34°C) operation of strain-compensated quantum cascade lasers
Author :
Liu, Feng-Qi ; Zhang, Yong-Zhao ; Zhang, Quan-Sheng ; Ding, Ding ; Xu, Bo ; Wang, Zhan-Guo ; Jiang, De-Sheng ; Sun, Bao-Quan
Author_Institution :
Inst. of Semicond., Acad. Sinica, Beijing, China
fDate :
9/28/2000 12:00:00 AM
Abstract :
A short wavelength (λ-3.5 μm) strain-compensated InxGa(1-x)As/InyAl(1-y)As quantum cascade laser is reported. Quasi-continuous wave operation of this device at 34°C with an output power of 11.4 mW persisted for more than 30 minutes without obvious degradation. A very low threshold current density of 1.2 KA/cm2 at this temperature was observed
Keywords :
III-V semiconductors; aluminium compounds; current density; gallium arsenide; indium compounds; laser beams; laser transitions; quantum well lasers; 11.4 mW; 3.5 mum; 30 min; 34 C; InxGa(1-x)As/InyAl(1-y) As quantum cascade laser; InGaAs-InAlAs; output power; quantum cascade laser; quasi-continuous wave operation; room temperature operation; short wavelength laser; strain-compensated quantum cascade lasers; threshold current density;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20001188
