DocumentCode
1404351
Title
Threshold current reduction in InGaN MQW laser diode with λ/4 air/semiconductor Bragg reflectors
Author
Marinelli, C. ; Sargent, L.J. ; Wonfor, A. ; Rorison, J.M. ; Penty, R.V. ; White, I.H. ; Heard, P.J. ; Hasnain, G. ; Schneider, R.
Author_Institution
Centre for Commun. Res., Bristol Univ., UK
Volume
36
Issue
20
fYear
2000
fDate
9/28/2000 12:00:00 AM
Firstpage
1706
Lastpage
1707
Abstract
A 13% reduction in the threshold current density of InGaN laser diodes is demonstrated upon the introduction of two 5λ/4 air/nitride Bragg reflectors. These are defined at one end of the laser cavity by means of focused ion beam etching
Keywords
III-V semiconductors; current density; focused ion beam technology; gallium compounds; indium compounds; laser beams; laser cavity resonators; laser mirrors; optical fabrication; quantum well lasers; sputter etching; λ/4 air/semiconductor Bragg reflectors; InGaN; InGaN MQW laser diode; InGaN laser diodes; focused ion beam etching; laser cavity; multiple quantum well laser diode; threshold current density; threshold current reduction;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20001230
Filename
882015
Link To Document