Title :
Low-frequency noise in AlGaN/GaN heterostructure field effect transistors
Author :
Kuksenkov, D.V. ; Temkin, H. ; Gaska, R. ; Yang, J.W.
Author_Institution :
Dept. of Electr. Eng., Texas Tech. Univ., Lubbock, TX, USA
fDate :
7/1/1998 12:00:00 AM
Abstract :
We report low-frequency noise characteristics of doped-channel GaN/AlGaN heterostructure field-effect transistors grown on sapphire substrates. In the frequency range 1 Hz-100 kHz the observed noise is of the 1/f character. The Hooge constant is of the order of 10/sup -2/ and is linearly proportional to the channel width. The noise originates in the fluctuation of carrier number in the channel due to relatively high density of defects at the GaN/AlGaN heterointerface.
Keywords :
1/f noise; III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; semiconductor device noise; 1 Hz to 100 kHz; 1/f noise; AlGaN-GaN; Hooge constant; carrier number fluctuation; channel width; defect density; heterostructure field effect transistors; low-frequency noise; sapphire substrates; Aluminum gallium nitride; Doping; Electron mobility; FETs; Gallium nitride; HEMTs; Low-frequency noise; MODFETs; Microwave devices; Voltage;
Journal_Title :
Electron Device Letters, IEEE
