High-temperature performance of GaAs-based HFET structure containing LT-AlGaAs and LT-GaAs

Author

Schmid, P. ; Lipka, K.-M. ; Ibbetson, J. ; Nguyen, N. ; Mishra, U. ; Pond, L. ; Weitzel, C. ; Kohn, E.

Author_Institution

Dept. of Electron. Devices & Circuit, Ulm Univ., Germany

Volume

19

Issue

7

fYear

1998

fDate

7/1/1998 12:00:00 AM

Firstpage

225

Lastpage

227

Abstract

Using low-temperature grown layers a GaAs-based HFET structure was developed, which demonstrates for the first time high performance at high temperatures up to 540/spl deg/C, where the gate diode shunts through. The device was designed for operation in the hot electron regime using an LT-AlGaAs passivation layer. Thus, the open channel current density and gain bandwidth product are exceptionally stable (I/sub D500/spl deg/C//I/sub DR.T./=0.9; f/sup T200/spl deg/C/f/sub TR.T./=0.9). The f/sub max/ cutoff frequency is the most temperature sensitive parameter {(f/sub max//f/sub T/)/sub R.T./=3.9 and (f/sub max//f/sub T/)/sub 200/spl deg/C/=2.8} due to the thermal activation of the buffer layer leakage, which is kept extremely small using LT-GaAs.

Keywords

III-V semiconductors; aluminium compounds; current density; gallium arsenide; hot electron transistors; 540 degC; AlGaAs passivation layer; AlGaAs-GaAs; HFET; buffer layer leakage; cutoff frequency; gain bandwidth product; high performance; hot electron regime; low-temperature grown layers; open channel current density; Bandwidth; Buffer layers; Current density; Cutoff frequency; Diodes; Electrons; HEMTs; MODFETs; Passivation; Temperature sensors;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.701424

Filename

701424