Title :
4H-SiC MOSFETs utilizing the H2 surface cleaning technique
Author :
Ueno, K. ; Asai, R. ; Tsuji, T.
Author_Institution :
Fuji Electr. Corp. Res. & Dev. Ltd., Yokosuka, Japan
fDate :
7/1/1998 12:00:00 AM
Abstract :
The H2 cleaning technique was examined as the precleaning of the gate oxidation for 4H-SiC MOSFETs. The device had a channel width and length of 150 and 100 μm, fabricated on the p-type epitaxial layer of 3×10/sup 16/ cm/sup -3/. The gate oxidation was performed after the conventional RCA cleaning, and H2 annealing at 1000/spl deg/C. The obtained channel mobility depends on the pre-cleaning process strongly, and was achieved 20 cm2/N s in the H2 annealed sample. The effective interface-state density was also measured by the MOS capacitors fabricated on the same chips, resulting 1.8×10/sup 12/ cm/sup -2/ from the photo-induced C-V method.
Keywords :
MOS capacitors; MOSFET; annealing; electron mobility; interface states; oxidation; photocapacitance; silicon compounds; surface cleaning; wide band gap semiconductors; 100 mum; 1000 C; 150 mum; 4H-SiC MOSFET; H/sub 2/; H/sub 2/ annealing; H/sub 2/ cleaning technique; H/sub 2/ surface cleaning technique; MOS capacitors; RCA cleaning; SiC-SiO/sub 2/; channel length; channel mobility; channel width; gate oxidation; interface-state density; p-type epitaxial layer; photo-induced C-V method; pre-cleaning process; precleaning; Annealing; Fabrication; Hafnium; Hydrogen; MOS capacitors; MOSFET circuits; Oxidation; Semiconductor device measurement; Silicon carbide; Surface cleaning;
Journal_Title :
Electron Device Letters, IEEE
