• DocumentCode
    1404492
  • Title

    Evaluation of effective electron velocity in AlGaN/GaN HEMTs

  • Author

    Akita, M. ; Kishimoto, S. ; Maezawa, K. ; Mizutani, T.

  • Author_Institution
    Dept. of Quantum Eng., Nagoya Univ., Japan
  • Volume
    36
  • Issue
    20
  • fYear
    2000
  • fDate
    9/28/2000 12:00:00 AM
  • Firstpage
    1736
  • Lastpage
    1737
  • Abstract
    The authors have fabricated a 1.3 μm-long gate AlGaN/GaN HEMT with fT of 14.1 GHz, corresponding to a high 1T×gate length product of 18.3 GHz·μm. By analysing the relationship between the delay time and the inverse of the drain current, the effective electron velocity in the channel was evaluated to be as high as 1.2×107 cm/s
  • Keywords
    aluminium compounds; 1.3 micron; 14.1 GHz; AlGaN-GaN; AlGaN/GaN HEMTs; delay time; drain current inverse; effective electron velocity evaluation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20001193
  • Filename
    882035
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1404492