Title :
A better understanding of the channel mobility of Si MOSFETs based on the physics of quantized subbands
Author_Institution :
AT&T Bell Lab., Murray Hill, NJ, USA
fDate :
12/1/1988 12:00:00 AM
Abstract :
The recently reported larger mobility degradation at higher transverse electric fields and lower temperatures is explained based on the physics of electron population and scattering mechanisms of quantized subbands at (100) Si surfaces. The simple empirical mobility model proposed by T.-C. Ong et al. (ibid., vol.34, no.10, p.2129-35, 1987) is also discussed
Keywords :
carrier mobility; elemental semiconductors; insulated gate field effect transistors; semiconductor device models; silicon; MOSFETs; Si; channel mobility; empirical mobility model; higher transverse electric fields; lower temperatures; mobility degradation; models; physics of electron population; physics of quantized subbands; scattering mechanisms; Degradation; Electron mobility; Energy states; Land surface temperature; MOSFETs; Physics; Rough surfaces; Scattering; Surface roughness; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
