Title :
Physical scaling rules for AlGaAs/GaAs power HBTs based on a small-signal equivalent circuit
Author :
Schaper, U. ; Zwicknagl, P.
Author_Institution :
Corp. Technol., Siemens AG, Munich, Germany
fDate :
7/1/1998 12:00:00 AM
Abstract :
Physical scaling rules for AlGaAs/GaAs heterojunction bipolar transistors (HBTs) containing 2-16 emitter fingers are demonstrated, the parameter extraction is based on a small signal equivalent circuit. The scaling parameters compare favorably with the measured data from the process control monitor
Keywords :
III-V semiconductors; UHF bipolar transistors; aluminium compounds; equivalent circuits; gallium arsenide; heterojunction bipolar transistors; microwave bipolar transistors; power bipolar transistors; AlGaAs-GaAs; III-V semiconductors; emitter fingers; parameter extraction; physical scaling rules; power HBT; process control monitor; scaling parameters; small-signal equivalent circuit; Contact resistance; Doping; Equivalent circuits; Gallium arsenide; Gold; Heterojunction bipolar transistors; Ohmic contacts; Parameter extraction; Process control; Voltage;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
