• DocumentCode
    1404744
  • Title

    Transient behavior of optimized nipiin three-color detectors

  • Author

    Stiebig, Helmut ; Knipp, Dietmar ; Zimmer, Jürgen ; Wagner, Heribert

  • Author_Institution
    Forschungszentrum Julich GmbH, Germany
  • Volume
    45
  • Issue
    7
  • fYear
    1998
  • fDate
    7/1/1998 12:00:00 AM
  • Firstpage
    1438
  • Lastpage
    1444
  • Abstract
    The detection of the fundamental components of the visible light (blue, green, red) is realized with a multispectral photodiode based on amorphous silicon. The preferential carrier collection region of this two-terminal device shifts upon changing the applied bias voltage, which leads to a color sensitivity. Structures with controlled bandgap and mobility-lifetime product exhibit a dynamic behavior above 95 dB. Three linearly independent spectral response curves can be extracted to generate a RGB-(red-green-blue)-signal. Bias voltage switching experiments under different monochromatic illumination conditions are carried out to investigate the time-dependent behavior. Furthermore, in order to improve the understanding of the photocurrent transients, we have characterized the voltage-dependent capacitance behavior, Thus, a Simulation Program with Integrated Circuit Emphasis (SPICE) model including the capacitance-voltage (CV) data has been developed, which describes the transient behavior of the detector. The simulations are in good agreement with the experimental data and allow an interpretation of the transient photocurrent response after bias voltage switching. Based on these results, optimization criteria to improve the transient behavior are discussed
  • Keywords
    SPICE; amorphous semiconductors; elemental semiconductors; p-i-n photodiodes; photodetectors; silicon; RGB signal; SPICE model; Si:H; amorphous silicon; bandgap; bias voltage switching; capacitance-voltage characteristics; carrier collection; mobility-lifetime product; multispectral photodiode; nipiin three-color detector; optimization; simulation; spectral response; transient photocurrent; two-terminal device; visible light detection; Amorphous silicon; Capacitance; Detectors; Integrated circuit modeling; Lighting; Photoconductivity; Photodiodes; Photonic band gap; SPICE; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.701473
  • Filename
    701473