Tunable frequency Gunn diodes fabricated by focused ion beam implantation

Author

Lezec, Henri J. ; Ismail, K. ; Mahoney, L.J. ; Antoniadis, Dimitri A. ; Melngailis, J.

Author_Institution

MIT, Cambridge, MA

Volume

35

Issue

12

fYear

1988

fDate

12/1/1988 12:00:00 AM

Firstpage

2429

Abstract

Gun diodes have been fabricated in GaAs, where the implanted doping concentration is varied linearly from one contact to the other. The starting material was semi-insulating GaAs, and Si⁺⁺ ions were implanted at 140 keV. The dose was varied from 1×10¹³ cm^-2 to 3×10¹³ cm^-2 over a distance of 80 μm. The width of the implant was 10 μm. The frequency of oscillation could be smoothly tuned from 6 to 23 GHz by varying the bias voltage in the range of 25 to 35 V. Identical-geometry but uniformly doped devices exhibited bias-independent frequency of oscillation. Other doping profiles can yield other functions. A numerical model to solve the conservation equations, coupled with Poisson´s equation, has been developed to simulate device performance. The solution is performed in the time domain and allows the domain nucleation, motion, and discharge to be observed. Doping profiles that optimize the diode performance can be predicted

Keywords

Gunn diodes; III-V semiconductors; doping profiles; gallium arsenide; ion implantation; semiconductor device models; 140 keV; 25 to 35 V; 6 to 23 GHz; GaAs; GaAs:Si²⁺; Gunn diodes; Poisson´s equation; bias voltage; conservation equations; domain nucleation; doping profiles; focused ion beam implantation; frequency of oscillation; frequency tuning; implanted doping concentration; numerical model; simulation; time domain solution; Diodes; Doping profiles; Frequency; Gallium arsenide; Gunn devices; Implants; Ion beams; Numerical models; Poisson equations; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.8833

Filename

8833