Compact LDD nMOSFET degradation model

Author

Liu, Shau-Shen ; Jang, Sheng-Lyang ; Chyau, Chwan-Gwo

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

Volume

45

Issue

7

fYear

1998

fDate

7/1/1998 12:00:00 AM

Firstpage

1538

Lastpage

1547

Abstract

In this paper, we present a compact degraded I-V model for submicron lightly-doped drain (LDD) MOSFET´s. The analytical and physics-based model was developed using the drift equation and considering the nonuniform spatial hot-carrier-induced interface states and the detailed LDD structure. It can be used to calculate fresh channel electric field and drain current by turning off the effect of hot-carrier-induced interface states. Using the fresh electric field in conjunction with a simplified energy balance equation, the nonuniform spatial distribution of induced interface states ran be calculated. By incorporating this distribution into the degraded current model, we can describe the damaged I-V characteristics and channel electric fields as a function of stress time. The model includes the effects of series resistances and carrier velocity saturation. It can be used to calculate time-dependent degraded drain current, and is a time-saving CAD model

Keywords

MOSFET; hot carriers; interface states; semiconductor device models; CAD; I-V characteristics; LDD nMOSFET degradation model; carrier velocity saturation; channel electric field; drain current; drift equation; energy balance equation; hot carrier stress; interface states; nonuniform spatial distribution; series resistance; submicron lightly doped drain MOSFET; Analytical models; Degradation; Equations; Hot carrier effects; Hot carriers; Interface states; MOSFET circuits; Nonuniform electric fields; Radio access networks; Turning;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.701486

Filename

701486