• DocumentCode
    1404844
  • Title

    Modeling and simulation of stress-induced leakage current in ultrathin SiO2 films

  • Author

    Riccò, Bruno ; Gozzi, Gianfranco ; Lanzoni, Massimo

  • Author_Institution
    Dipt. di Elettronica, Inf. e Sistemistica, Bologna Univ., Italy
  • Volume
    45
  • Issue
    7
  • fYear
    1998
  • fDate
    7/1/1998 12:00:00 AM
  • Firstpage
    1554
  • Lastpage
    1560
  • Abstract
    This paper presents a new model fur stress-induced leakage current (SILC) in ultrathin SiO2 films, that is able to explain and accurately represent the experimental data obtained with MOS capacitors fabricated with different technologies and oxide thickness in the 3-7 nm range
  • Keywords
    MOS capacitors; insulating thin films; leakage currents; silicon compounds; 3 to 7 nm; MOS capacitor; SILC; SiO2; modeling; simulation; stress induced leakage current; ultrathin SiO2 film; Conductive films; Conductivity; Electrons; Leakage current; MOS capacitors; Nonvolatile memory; Stress; Substrates; Tunneling; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.701488
  • Filename
    701488
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1404844