Title :
Modeling and simulation of stress-induced leakage current in ultrathin SiO2 films
Author :
Riccò, Bruno ; Gozzi, Gianfranco ; Lanzoni, Massimo
Author_Institution :
Dipt. di Elettronica, Inf. e Sistemistica, Bologna Univ., Italy
fDate :
7/1/1998 12:00:00 AM
Abstract :
This paper presents a new model fur stress-induced leakage current (SILC) in ultrathin SiO2 films, that is able to explain and accurately represent the experimental data obtained with MOS capacitors fabricated with different technologies and oxide thickness in the 3-7 nm range
Keywords :
MOS capacitors; insulating thin films; leakage currents; silicon compounds; 3 to 7 nm; MOS capacitor; SILC; SiO2; modeling; simulation; stress induced leakage current; ultrathin SiO2 film; Conductive films; Conductivity; Electrons; Leakage current; MOS capacitors; Nonvolatile memory; Stress; Substrates; Tunneling; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
