Title :
Bistability and hysteresis in the characteristics of segmented-anode lateral IGBTs
Author :
Gärtner, M. ; Vietzke, D. ; Reznik, D. ; Stoisiek, M. ; Oppermann, K.-G. ; Gerlach, W.
Author_Institution :
Siemens AG, Munich, Germany
fDate :
7/1/1998 12:00:00 AM
Abstract :
The voltage and current controlled bistability of segmented anode lateral insulated gate bipolar transistors (SA-LIGBTs) containing more than one p-anode segment has been investigated experimentally by means of monitoring the infrared recombination radiation, as well as theoretically by two-dimensional (2-D) device simulation. We have found out that the instabilities are caused by the switching of single p-anode segments from the MOS-mode into the conductivity modulated state and vice-versa. The switching current and voltage show pronounced memory effects, if the single cell structure exhibits S-type negative differential conductivity (SNDC) because of conductivity modulation. The simulation of a simplified vertical hybrid diode/pnp-transistor structure shows very good qualitative agreement with measured characteristics and carrier distributions in the SA-LIGBT. Generally, such hysteresis effects may occur in all electronic devices containing SNDC-elements switched in parallel
Keywords :
hysteresis; insulated gate bipolar transistors; negative resistance devices; MOS mode; S-type negative differential conductivity; SA-LIGBT; SNDC element; bistability; carrier distribution; conductivity modulation; electronic device; hysteresis; infrared recombination radiation; memory effect; parallel switching; segmented anode lateral insulated gate bipolar transistor; two-dimensional device simulation; vertical hybrid diode/pnp-transistor structure; Anodes; Conductivity; Dielectric devices; Hysteresis; Infrared surveillance; Insulated gate bipolar transistors; Plasma devices; Plasma properties; Radiation monitoring; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
