DocumentCode
1404895
Title
Design of integrated current sensor for lateral IGBT power devices
Author
Liang, Yung C. ; Samudra, Ganesh S. ; Hor, Vincent S S
Author_Institution
Dept. of Electr. Eng., Nat. Univ. of Singapore, Singapore
Volume
45
Issue
7
fYear
1998
fDate
7/1/1998 12:00:00 AM
Firstpage
1614
Lastpage
1616
Abstract
The integration of current sensor in power devices is generally an important feature when the devices undergoing design are to be used fur advanced power electronic applications. This brief, for the first time, proposes a design of integrated current sensor for lateral insulated-gate bipolar transistor (LIGBT) power devices. The sensor is able to provide a constant lateral current sensing ratio over the wide variations of operating current density and gate voltage. A small variation in the sensing ratio was also achieved over normal operating temperature range of 250-150 K
Keywords
electric current measurement; electric sensing devices; insulated gate bipolar transistors; LIGBT power device; design; device simulation; integrated current sensor; lateral insulated gate bipolar transistor; power electronics; Anodes; Cathodes; Charge carrier processes; Current density; Current measurement; Insulated gate bipolar transistors; Power electronics; Temperature distribution; Temperature sensors; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.701496
Filename
701496
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