Low-damage dry-etched grating on an MQW active layer and dislocation-free InP regrowth for 1.55-/spl mu/m complex-coupled DFB lasers fabrication

Author

Talneau, A. ; Bouadma, N. ; Lebellego, Y. ; Slempkes, S. ; Ougazzaden, A. ; Patriarche, G. ; Sermage, B.

Author_Institution

CNET, Bagneux, France

Volume

10

Issue

8

fYear

1998

Firstpage

1070

Lastpage

1072

Abstract

A grating dry-etched through the upper wells of a multiquantum-well active layer has been characterized before and after regrowth. TEM observation and carrier lifetime measurements have shown growth-free defects of the epitaxial layers. As a consequence, quasi-100% monomode oscillation on /spl lambda/+1 mode has been achieved on complex-coupled distributed-feedback GaInAsP QW lasers fabricated with such grating.

Keywords

III-V semiconductors; carrier lifetime; diffraction gratings; distributed feedback lasers; epitaxial growth; etching; gallium arsenide; gallium compounds; indium compounds; laser modes; optical fabrication; optical testing; quantum well lasers; semiconductor device testing; semiconductor growth; transmission electron microscopy; 1.55 mum; 1.55-/spl mu/m complex-coupled DFB lasers fabrication; InGaAsP; MQW active layer; TEM observation; carrier lifetime measurements; complex-coupled distributed-feedback lasers; dislocation-free InP regrowth; epitaxial layers; grating; growth-free defects; low-damage dry-etched grating; monomode oscillation; multiquantum-well active layer; optical fabrication; upper wells; Etching; Gratings; Holography; Indium phosphide; Laser tuning; Optical device fabrication; Quantum well devices; Quantum well lasers; Resists; Silicon compounds;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.701505

Filename

701505