Monolithically integrated InGaAs-AlGaAs master oscillator power amplifier with grating outcoupler

Author

Uemukai, M. ; Matsumoto, N. ; Suhara, T. ; Nishihara, H. ; Eriksson, N. ; Larsson, A.

Author_Institution

Dept. of Electron., Osaka Univ., Japan

Volume

10

Issue

8

fYear

1998

Firstpage

1097

Lastpage

1099

Abstract

A monolithically integrated master oscillator power amplifier with a grating outcoupler, fabricated using a simple process without regrowth and emitting a collimated output beam, is proposed and demonstrated using an InGaAs-AlGaAs strained single-quantum-well gradient-index separate-confinement-heterostructure. Stable single-mode lasing up to 124-mW output power was obtained under continuous-wave operation. An increase of the output beam divergence, due to a wavefront distortion produced in the power amplifier, was observed with increasing power amplifier injection current. The wavefront distortion can be compensated by an appropriate design of the grating outcoupler.

Keywords

III-V semiconductors; aluminium compounds; diffraction gratings; gallium arsenide; gradient index optics; indium compounds; integrated optoelectronics; optical couplers; quantum well lasers; 124 mW; InGaAs-AlGaAs; InGaAs-AlGaAs strained single-quantum-well gradient-index separate-confinement-heterostructure; collimated output beam; continuous-wave operation; grating outcoupler design; monolithically integrated InGaAs-AlGaAs master oscillator power amplifier; output beam divergence; output power; power amplifier; power amplifier injection current; stable single-mode lasing; wavefront distortion; Collimators; Distributed Bragg reflectors; Gratings; Laser beams; Optical amplifiers; Optical distortion; Oscillators; Power amplifiers; Semiconductor optical amplifiers; Surface emitting lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.701514

Filename

701514