Title :
Resonant cavity photodetector with integrated spectral notch filter
Author :
Kinsey, G. ; Lenox, C. ; Nie, H. ; Campbell, J.C. ; Streetman, B.G.
Author_Institution :
Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
Abstract :
A p-i-n resonant cavity enhanced photodetector for absorption at 1.55 μm has been integrated with two stacks of six pairs of ZnSe-MgF2 dielectric mirrors. The stacks act as a notch filter to reflect off-peak radiation. Peak external quantum efficiency over 90% was achieved at 1.52 μm, with off-peak rejection of approximately 20 dB across a 700-nm range. Design of the structure was based on simulations using the transfer matrix method.
Keywords :
II-VI semiconductors; magnesium compounds; matrix algebra; mirrors; notch filters; optical communication equipment; optical design techniques; optical films; optical filters; optical resonators; p-i-n photodiodes; photodetectors; reflectivity; zinc compounds; 1.52 mum; 1.55 mum; 90 percent; ZnSe-MgF/sub 2/; ZnSe-MgF/sub 2/ dielectric mirror stack pair; integrated spectral notch filter; off-peak radiation reflection; off-peak rejection; optical filter design; p-i-n resonant cavity enhanced photodiode photodetector; peak external quantum efficiency; resonant cavity photodetector; transfer matrix method; Absorption; Dielectric films; Distributed Bragg reflectors; Mirrors; Optical filters; Optoelectronic devices; PIN photodiodes; Photodetectors; Reflectivity; Resonance;
Journal_Title :
Photonics Technology Letters, IEEE
