The impact of LOC structures on 670-nm (Al)GaInP high-power lasers

Author

Lichtenstein, N. ; Winterhoff, R. ; Scholz, Ferdinand ; Schweizer, Heinz ; Weiss, S. ; Hutter, M. ; Reichl, H.

Author_Institution

JDS Uniphase, Zurich, Switzerland

Volume

6

Issue

4

fYear

2000

Firstpage

564

Lastpage

570

Abstract

We investigate the potential of large optical cavity (LOC)-laser structures for AlGaInP high-power lasers. For that we study large series of broad area lasers with varying waveguide widths to obtain statistically relevant data. We study in detail I/sub th/, /spl alpha//sub i/, /spl eta//sub i/, and P/sub max/, and analyze above-threshold behavior including temperature stability and leakage current. We got as expected for LOC structures minimal /spl alpha//sub i//spl les/1 cm/sup -1/ resulting in /spl eta//sup d/=1.1 W/A for 64/spl times/2000 /spl mu/m/sup 2/ uncoated devices. We obtain total output powers /spl ges/3.2 W (qCW) and /spl ges/1.5 W (CW) at 20/spl deg/C.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser cavity resonators; laser transitions; semiconductor lasers; waveguide lasers; 1.5 W; 20 C; 3.2 W; 670 nm; AlGaInP; AlGaInP high-power lasers; LOC structures; above-threshold behavior; large optical cavity laser structures; leakage current; statistically relevant data; temperature stability; total output powers; waveguide widths; Biomedical optical imaging; Lab-on-a-chip; Leakage current; Optical materials; Optical resonators; Optical sensors; Optical waveguides; Power lasers; Quantum well lasers; Waveguide lasers;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/2944.883369

Filename

883369