• DocumentCode
    1405343
  • Title

    High-performance submicrometer channel MOSFETs for analog applications

  • Author

    Antoniadis, Dimitri A.

  • Volume
    35
  • Issue
    12
  • fYear
    1988
  • fDate
    12/1/1988 12:00:00 AM
  • Firstpage
    2430
  • Lastpage
    2431
  • Abstract
    The authors report the design and fabrication of a submicrometer-channel-length DMOS transistor that offers a significant increase in r0, a higher gm, an increase in breakdown voltage, and a reduced body effect when compared to regular NMOS transistors. The cost of integration of this device is two mask steps and two implants. Only photoresist patterning is required, and the process temperature budget is easily accommodated by any CMOS process
  • Keywords
    CMOS integrated circuits; insulated gate field effect transistors; semiconductor technology; CMOS process; DMOS transistor; analog applications; breakdown voltage; implants; mask steps; photoresist patterning; process temperature budget; reduced body effect; submicrometer-channel-length; transconductance; Boron; Doping; FETs; Glass; Immune system; MOS devices; MOSFETs; Parasitic capacitance; Passivation; Transconductance;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.8834
  • Filename
    8834
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1405343