Title :
High-temperature operation of 1.3 μm AlGaInAs strained multiple quantum well lasers
Author :
Takemasa, K. ; Munakata, T. ; Kobayashi, Masato ; Wada, H. ; Kamijoh, T.
Author_Institution :
Optoelectron. Lab., Oki Electr. Ind. Co. Ltd., Tokyo, Japan
fDate :
6/11/1998 12:00:00 AM
Abstract :
High-temperature operation of 1.3 μm AlGaInAs/InP strained multiple quantum well lasers is demonstrated. An excellent CW characteristic temperature of 111 K was obtained between 20 and 80°C and a record high operating temperature of 210°C was achieved with a 700 μm long laser under pulse excitation. Power reductions at a constant current with increasing temperature were also evaluated at 80°C to be -1.27 and -1.67 dB under pulse and CW excitations, respectively
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; optical communication equipment; quantum well lasers; 1.3 micrometre; 20 to 80 degC; 210 degC; 700 micron; AlGaInAs; CW characteristic temperature; CW excitation; III-V semiconductors; constant current power reductions; high-temperature operation; pulse excitation; strained multiple quantum well lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980876
