DocumentCode
1405656
Title
GaAs-based, 1.55 μm high speed, high saturation power, low-temperature grown GaAs p-i-n photodetector
Author
Chiu, Yi-Jen ; Zhang, S.Z. ; Fleischer, S.B. ; Bowers, J.E. ; Mishra, U.K.
Author_Institution
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Volume
34
Issue
12
fYear
1998
fDate
6/11/1998 12:00:00 AM
Firstpage
1253
Lastpage
1255
Abstract
A novel 1.55 μm high speed (>20 GHz) and high saturation power (>10 mW) p-i-n photodetector grown on a GaAs substrate is reported. By utilising low-temperature grown GaAs, the photodetectors can detect 1.55 μm light with high bandwidth owing to the short carrier trapping time
Keywords
p-i-n photodiodes; 1.55 micrometre; GaAs; III-V semiconductors; bandwidth; carrier trapping time; low-temperature grown material; p-i-n photodetector; saturation power;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19980852
Filename
702407
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