Title :
GaAs-based, 1.55 μm high speed, high saturation power, low-temperature grown GaAs p-i-n photodetector
Author :
Chiu, Yi-Jen ; Zhang, S.Z. ; Fleischer, S.B. ; Bowers, J.E. ; Mishra, U.K.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
fDate :
6/11/1998 12:00:00 AM
Abstract :
A novel 1.55 μm high speed (>20 GHz) and high saturation power (>10 mW) p-i-n photodetector grown on a GaAs substrate is reported. By utilising low-temperature grown GaAs, the photodetectors can detect 1.55 μm light with high bandwidth owing to the short carrier trapping time
Keywords :
p-i-n photodiodes; 1.55 micrometre; GaAs; III-V semiconductors; bandwidth; carrier trapping time; low-temperature grown material; p-i-n photodetector; saturation power;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980852
