DocumentCode
1405707
Title
Effect of polysilicon depletion effect on series resistance and transconductance of MOS transistors at 4.2 K
Author
Gutierrez, D.
Author_Institution
INAOE, Puebla
Volume
34
Issue
12
fYear
1998
fDate
6/11/1998 12:00:00 AM
Firstpage
1264
Lastpage
1265
Abstract
Experimental results of the effect of the polysilicon depletion effect on 0.5 μm MOS transistors, operated at 4.2 K, are shown here. These results serve to shed light on the interplay of series resistance, freeze-out, and field-induced charge ionisation effects on the characterisation and modelling of sub-micrometre MOSFETs operated at 4.2 K
Keywords
MOS capacitors; MOSFET; elemental semiconductors; semiconductor device models; silicon; 0.5 micron; 4.2 K; MOS transistors; Si; field-induced charge ionisation effects; freeze-out; modelling; polysilicon depletion effect; series resistance; sub-micrometre MOSFETs; transconductance;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19980890
Filename
702415
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