Title :
Microwave performance of GaxIn1-xP/Ga0.47In0.53As resonant tunnelling diodes
Author :
Cohen, G.M. ; Ritter, D.
Author_Institution :
Dept. of Electr. Eng., Technion-Israel Inst. of Technol., Haifa, Israel
fDate :
6/11/1998 12:00:00 AM
Abstract :
Room temperature DC and microwave operation of aluminium free GaInP/GaInAs/InP resonant tunnelling diodes is reported. The diodes exhibited peak current densities up to 64 kA/cm2 and useful peak to valley current ratios. On-wafer S-parameters were measured up to 40 GHz to extract the equivalent circuit of the device. Based on the small signal analysis, the diode cutoff frequency was estimated to be 150 GHz
Keywords :
III-V semiconductors; S-parameters; equivalent circuits; gallium arsenide; gallium compounds; indium compounds; microwave diodes; resonant tunnelling diodes; 150 GHz; 50 MHz to 40 GHz; GaInP-GaInAs-InP; III-V semiconductors; diode cutoff frequency; equivalent circuit; microwave operation; on-wafer S-parameters; peak current densities; peak to valley current ratios; resonant tunnelling diodes; small signal analysis;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980860
