Title :
Comments on "A small-signal MOSFET model for radio frequency IC applications"
Author :
Tin, Suet Fong ; Osman, Ashraf A. ; Mayaram, Kartikeya
Author_Institution :
Sch. of Electr. Eng. & Comput. Sci., Washington State Univ., Pullman, WA, USA
fDate :
4/1/1998 12:00:00 AM
Abstract :
For original paper see E. Abou-Allam and T. Manku, ibid., vol.16, pp.437-47 (1997). A comparison is provided between the recent small-signal analysis for the distributed gate resistance in MOSFET´s at RF frequencies and the lumped-element model of an earlier publication for various CMOS technologies. An improved lumped-element model is also proposed. It is demonstrated that simplified lumped-element circuits are adequate for modeling the effect of distributed gate resistance on both the y parameters and the thermal noise.
Keywords :
CMOS integrated circuits; MOSFET; field effect MMIC; lumped parameter networks; microwave field effect transistors; semiconductor device models; semiconductor device noise; thermal noise; 5 GHz; CMOS technology; MOSFET; distributed gate resistance; lumped element model; radio frequency IC; small-signal analysis; thermal noise; y parameters; Application specific integrated circuits; CMOS technology; Capacitance; Circuit noise; Integrated circuit modeling; MOSFET circuits; Radio frequency; Radiofrequency integrated circuits; Semiconductor device modeling; Thermal resistance;
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
