Title :
Change of gm(f) and breakdown voltage induced by thermal annealing of surface states in power MESFETs
Author :
Canali, C. ; Corti, E. ; Gabrielli, B. ; Magistrali, F. ; Paccagnella, A. ; Sangalli, M. ; Tedesco, C.
Author_Institution :
Dipartimento di Elettronica e Inf., Padova Univ., Italy
fDate :
4/1/1990 12:00:00 AM
Abstract :
The improvement of the dispersion curve of the transconductance frequency, gm(f), and the decrease in breakdown voltage observed in power MESFETs undergoing accelerated tests is discussed. These changes are thermally activated and are attributed to thermal annealing of surface states. The activation energy, Ea=1.0 eV, can be used to evaluate device reliability
Keywords :
Schottky gate field effect transistors; electric breakdown of solids; life testing; power transistors; reliability; semiconductor device testing; surface electron states; accelerated tests; activation energy; breakdown voltage; device reliability; dispersion curve; power MESFETs; surface states; thermal annealing; transconductance frequency; Annealing; Conducting materials; Current density; Current-voltage characteristics; Electron devices; Gallium arsenide; Irrigation; MESFETs; Poisson equations; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
