• DocumentCode
    1405898
  • Title

    Change of gm(f) and breakdown voltage induced by thermal annealing of surface states in power MESFETs

  • Author

    Canali, C. ; Corti, E. ; Gabrielli, B. ; Magistrali, F. ; Paccagnella, A. ; Sangalli, M. ; Tedesco, C.

  • Author_Institution
    Dipartimento di Elettronica e Inf., Padova Univ., Italy
  • Volume
    37
  • Issue
    4
  • fYear
    1990
  • fDate
    4/1/1990 12:00:00 AM
  • Firstpage
    1163
  • Lastpage
    1165
  • Abstract
    The improvement of the dispersion curve of the transconductance frequency, gm(f), and the decrease in breakdown voltage observed in power MESFETs undergoing accelerated tests is discussed. These changes are thermally activated and are attributed to thermal annealing of surface states. The activation energy, Ea=1.0 eV, can be used to evaluate device reliability
  • Keywords
    Schottky gate field effect transistors; electric breakdown of solids; life testing; power transistors; reliability; semiconductor device testing; surface electron states; accelerated tests; activation energy; breakdown voltage; device reliability; dispersion curve; power MESFETs; surface states; thermal annealing; transconductance frequency; Annealing; Conducting materials; Current density; Current-voltage characteristics; Electron devices; Gallium arsenide; Irrigation; MESFETs; Poisson equations; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.52456
  • Filename
    52456
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1405898