Title :
Reduction of hot-electron-generated substrate current in sub-100-nm channel length Si MOSFET´s
Author :
Shahidi, Ghavam G. ; Antoniadis, Dimitri A. ; Smith, Henry I
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA
fDate :
12/1/1988 12:00:00 AM
Abstract :
Channel-hot-electron-generated substrate current was measured in MOSFETs with channel lengths down to 0.09 μm, at room temperature and 77 K, and a reduction of the normalized substrate current was observed for very-short-channel devices. These devices were fabricated using X-ray lithography and had a nonuniformly doped channel. The reduction is attributed to nonlocal effects caused by the finite energy relaxation time
Keywords :
hot carriers; insulated gate field effect transistors; 0.09 micron; 300 K; 77 K; MOSFETs; Si; X-ray lithography; channel length; finite energy relaxation time; hot-electron-generated substrate current; nonlocal effects; nonuniformly doped channel; very-short-channel devices; Doping; Electrodes; FETs; Glass; MOSFET circuits; Parasitic capacitance; Passivation; Thermal resistance; Transconductance; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
