GaInAs/GaAs strained layer MQW electroabsorption optical modulator and self-electro-optic effect device

Author

Dobbelaere, Wim ; Kalem, Sid´Ali ; Huang, Dijiang ; Unlu, M.S. ; Morkoc, H.

Author_Institution

Coordinated Sci. Lab., Illinois Univ., Urbana, IL

Volume

24

Issue

5

fYear

1988

fDate

3/3/1988 12:00:00 AM

Firstpage

295

Lastpage

297

Abstract

The authors observed a clear excitonic absorption effect at room temperature in MBE-grown Ga_1-xIn_xAs/GaAs strained layer multiple quantum well structures, and fabricated optical pin modulators on the same structures. A change of 27% in the transmission, corresponding to a change in the absorption coefficient of 2260 cm^-1, with 6 V reverse bias voltage and at 9710 Å wavelength, was measured. They also operated the modulator as a self-electro-optic effect device, resulting in a nonlinear optical input/output characteristic

Keywords

electro-optical devices; gallium arsenide; indium compounds; integrated optoelectronics; optical modulation; semiconductor superlattices; 6 V; 9710 A; GaInAs-GaAs; MQW electroabsorption optical modulator; absorption coefficient; excitonic absorption effect; multiple quantum well structures; nonlinear optical input/output characteristic; optical pin modulators; reverse bias voltage; room temperature; self-electro-optic effect device; strained layer MQW structures; transmission; wavelength;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

Filename

5670