DocumentCode
1406391
Title
Evaluation of the internal quantum efficiency and saturation current of heavily doped emitters
Author
Donolato, C.
Author_Institution
Istituto LAMEL, Consiglio Nazionale delle Ricerche, Bologna, Italy
Volume
37
Issue
4
fYear
1990
fDate
4/1/1990 12:00:00 AM
Firstpage
1165
Lastpage
1167
Abstract
A procedure for analytically calculating the distribution of the charge-collection probability and hence the internal quantum efficiency and saturation current of heavily doped emitters is described. The method relies on a multilayer approximation that can be treated with the transfer matrix method and holes for arbitrary dependence on the depth of the dopant concentration, minority-carrier coefficient, and lifetime, and for any value of the surface recombination velocity
Keywords
bipolar transistors; heavily doped semiconductors; probability; semiconductor device models; carrier lifetime; charge-collection probability; dopant concentration depth; heavily doped emitters; internal quantum efficiency; minority-carrier coefficient; multilayer approximation; saturation current; surface recombination velocity; transfer matrix method; Bipolar transistors; Boundary conditions; Character generation; Equations; Nonhomogeneous media; Photovoltaic cells; Probability; Quasi-doping; Steady-state; Surface treatment;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.52457
Filename
52457
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