DocumentCode
1406508
Title
Reduced oxide charge trapping and improved hot-electron reliability in submicrometer MOS devices fabricated by titanium salicide process
Author
Chang, Shuo-Tung ; Chiu, Kuang Yi
Author_Institution
Hewlett-Packard Lab., Palo Alto, CA, USA
Volume
9
Issue
5
fYear
1988
fDate
5/1/1988 12:00:00 AM
Firstpage
244
Lastpage
246
Abstract
The effects of the titanium salicide (self-aligned silicide) process on the reliability of very-thin-gate-oxide MOSFETs have been studied. It is shown that the titanium salicide process, as compared to the conventional poly-Si gate process, has reduced electron and hole trapping in the oxide and improved hot-electron reliability. It is shown that these phenomena are related to the reduced hydrogen content in the oxide as revealed by a secondary ion mass spectrometry (SIMS) analysis.<>
Keywords
electron traps; hole traps; hot carriers; insulated gate field effect transistors; reliability; semiconductor device testing; semiconductor technology; SIMS; TiSi/sub 2/-Si; electron trapping; hole trapping; hot-electron reliability; oxide charge trapping; reduced hydrogen content; submicrometer MOS devices; titanium salicide process; very-thin-gate-oxide MOSFETs; Annealing; Electron traps; Hot carrier effects; Hydrogen; Interface states; MOS devices; Nitrogen; Silicides; Titanium; Voltage;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.704
Filename
704
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