Title :
Characteristics of InGaN-AlGaN multiple-quantum-well laser diodes
Author :
Bour, David P. ; Kneissl, Michael ; Romano, Linda T. ; McCluskey, Matthew D. ; Van deWalle, C.G. ; Krusor, Brent S. ; Donaldson, Rose M. ; Walker, Jack ; Dunnrowicz, Clarence J. ; Johnson, Noble M.
Author_Institution :
Electron. Mater. Lab., Xerox Palo Alto Res. Center, CA, USA
Abstract :
We demonstrate room-temperature pulsed current-injected operation of InGaAlN heterostructure laser diodes with mirrors fabricated by chemically assisted ion beam etching. The multiple-quantum-well devices were grown by organometallic vapor phase epitaxy on c-face sapphire substrates. The emission wavelengths of the gain-guided laser diodes were in the range from 419 to 432 nm. The lowest threshold current density obtained was 20 kA/cm2 with maximum output powers of 50 mW. Longitudinal Fabry-Perot modes are clearly resolved in the high-resolution optical spectrum of the lasers, with a spacing consistent with the cavity length. Cavity length studies on a set of samples indicate that the distributed losses in the structure are on the order of 30-40 cm-1
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser cavity resonators; laser mirrors; laser modes; laser transitions; optical fabrication; optical losses; quantum well lasers; semiconductor growth; vapour phase epitaxial growth; 419 to 432 nm; 50 mW; InGaAlN heterostructure laser diodes; InGaN-AlGaN; InGaN-AlGaN multiple-quantum-well laser diodes; c-face sapphire substrates; cavity length; chemically assisted ion beam etching; distributed losses; emission wavelengths; gain-guided laser diodes; high-resolution optical spectrum; laser mirror fabrication; longitudinal Fabry-Perot modes; lowest threshold current density; maximum output powers; multiple-quantum-well devices; organometallic vapor phase epitaxy; room-temperature pulsed current-injected operation; Chemical lasers; Diode lasers; Epitaxial growth; Etching; Ion beams; Mirrors; Optical pulses; Quantum well devices; Substrates; Threshold current;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/2944.704108
