Transconductance enhancement mechanisms in ultra-thin (⩽1000 Å) silicon-on-insulator MOSFETs

Author

Sturm, James C. ; Tokunaga, Kyoya ; Colinge, J.-P.

Author_Institution

Dept. of Electr. Eng., Princeton Univ., NJ

Volume

35

Issue

12

fYear

1988

fDate

12/1/1988 12:00:00 AM

Firstpage

2431

Lastpage

2432

Abstract

Two advantages of ultrathin (⩽1000 Å) silicon-on-insulator (SOI) films for MOSFETs that have not previously been reported are described. Compared to bulk FETs of similar dimensions are doping levels, the effects have been observed to give up to 35% increase in drain saturation current or transconductance. Both experimental data and modeling are discussed. It is noted that the kink effect is absent in the ultrathin-film SOI FETs, and that the results were adjusted to account for the difference in threshold voltage in the n-channel bulk and ultrathin-film structures. In general, an increase in saturation current should lead to faster circuits. The experiments and modeling results to date are for long-channel structures only

Keywords

insulated gate field effect transistors; semiconductor device models; semiconductor-insulator boundaries; 1000 Å; SOI MOSFET; drain saturation current; long-channel structures; modeling; threshold voltage; transconductance enhancement mechanisms; ultrathin-film SOI FETs; Capacitance measurement; Density measurement; Doping; Fluctuations; MOS devices; MOSFETs; Semiconductor process modeling; Silicon on insulator technology; Threshold voltage; Transconductance;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.8838

Filename

8838