Threshold conditions for an ultraviolet wavelength GaN quantum-well laser

Author

Chow, W.W. ; Crawford, M. Hagerott ; Girndt, A. ; Koch, S.W.

Author_Institution

Sandia Nat. Labs., Albuquerque, NM, USA

Volume

4

Issue

3

fYear

1998

Firstpage

514

Lastpage

519

Abstract

This paper describes an analysis of the threshold conditions for a GaN-AlGaN strained quantum-well (QW) laser. Gain spectra are computed using a many-body microscopic laser theory. The spontaneous emission rates are extracted from the gain spectra using a phenomenological expression based on energy conservation arguments. From the gain and spontaneous emission spectra, threshold current densities are estimated. Inhomogeneous broadening due to spatial variations in QW thickness are included in the analysis. Gain-current characteristics are determined for a number of laser heterostructure designs where the GaN QW width and Al composition of the AlGaN barrier material are varied

Keywords

III-V semiconductors; aluminium compounds; current density; gallium compounds; laser theory; quantum well lasers; semiconductor device models; spectral line broadening; Al composition; AlGaN barrier material; GaN QW width; GaN-AlGaN; GaN-AlGaN strained QW laser; GaN-AlGaN strained quantum-well laser; QW thickness; energy conservation arguments; gain spectra; gain-current characteristics; inhomogeneous broadening; many-body microscopic laser theory; phenomenological expression; spontaneous emission rates; spontaneous emission spectra; threshold conditions; threshold current densities; ultraviolet wavelength GaN quantum-well laser; Aluminum gallium nitride; Energy conservation; Gallium nitride; Laser theory; Microscopy; Optical design; Quantum well lasers; Quantum wells; Spontaneous emission; Threshold current;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/2944.704111

Filename

704111